HN1C03F Scheda tecnica(PDF) - Toshiba Semiconductor

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HN1C03F Scheda tecnica (PDF) - Toshiba Semiconductor

HN1C03F Datasheet PDF - Toshiba Semiconductor


Il numero della parte	HN1C03F

Scarica	HN1C03F Scarica

Grandezza file	197.48 Kbytes

Page	4 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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Spiegazioni elettronici

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

HN1C03F Datasheet (PDF)

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Scarica Scheda tecnica

HN1C03F Datasheet PDF - Toshiba Semiconductor


Il numero della parte	HN1C03F

Scarica	HN1C03F Click to download

Grandezza file	197.48 Kbytes

Page	4 Pages

Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

Logo

Spiegazioni elettronici	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

HN1C03F Scheda tecnica (HTML) - Toshiba Semiconductor

HN1C03F Datasheet HTML 1Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 2Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 3Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 4Page - Toshiba Semiconductor

HN1C03F Dettagli del prodotto

For Muting And Switching Applications

Including two devices in SM6 (Super mini type with 6 leads)

High emitter-base voltage: VEBO = 25V (min)

High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Low on resistance: RON = 1Ω (typ.)(IB = 5mA)

Codice articolo simile - HN1C03F

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
	HN1C03F	317Kb / 5P	For Muting And Switching Applications
	HN1C03FU	197Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	HN1C03FUTE85R	317Kb / 5P	For Muting And Switching Applications
	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications

Descrizione simile - HN1C03F

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	2SC3326	177Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	2SC3327	179Kb / 3P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	2SC4213	177Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
	2SC5232	160Kb / 4P	NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
	HN1C03FU	197Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	2SC2878	505Kb / 4P	Silicon NPN Epitaxial Type For Muting and Switching Applications
	2SC3326	512Kb / 5P	Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
	2SC4213	507Kb / 5P	Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
	RN1441	697Kb / 9P	Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications
	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications

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