RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =
   130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel
   Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
   on CCDF.
      Power Gain — 32 dB
      Power Added Efficiency — 17.5%
      ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
   Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts
   CW Pout.
• Typical Pout @ 1 dB Compression Point  30 Watts CW

GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 =
   430 mA, Pout = 16 Watts Avg., 1805-1880 MHz
      Power Gain — 33 dB
      Power Added Efficiency — 35%
      Spectral Regrowth @ 400 kHz Offset = -62 dBc
      Spectral Regrowth @ 600 kHz Offset = -77 dBc
      EVM — 1.5% rms

GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA,
   Pout = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz
      Power Gain — 31 dB
      Power Added Efficiency — 50%

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.