DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation.
Bond- pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment.

● 1200 µm X 0.5 µm HFET
● Nominal Pout of 28.5- dBm at 8.5-GHz
● Nominal Gain of 10.0-dB at 8.5-GHz
● Nominal PAE of 55% at 8.5-GHz
● Suitable for High-Reliability Applications
● 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)