DESCRIPTION P2V28S20ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and P2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and P2V28S40ATP is organized as 4-bank x 2,097, 152-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK.
   
FEATURES   
- Single 3.3V ±0.3V power supply
- Max. Clock frequency -7:143MHz<3-3-3>/-75:133MHz<3-3-3>/-8:100MHz<2-2-2>
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0,BA1(Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Byte Control- DQML and DQMU (P2V28S40ATP)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- Auto and self refresh
- 4096 refresh cycles /64ms
- LVTTL Interface
- Package
    P2V28S20ATP/30ATP/40ATP
    400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch