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HFP830 Scheda tecnica (PDF) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
HFP830 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Il numero della parte HFP830
Scarica  HFP830 Scarica
Grandezza file   398.35 Kbytes
Page   6 Pages
Produttore elettronici  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Homepage  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Spiegazioni elettronici N-Channel Enhancement Mode Field Effect Transistor

HFP830 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
HFP830 Datasheet PDF - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

Il numero della parte HFP830
Scarica  HFP830 Click to download

Grandezza file   398.35 Kbytes
Page   6 Pages
Produttore elettronici  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Homepage  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Spiegazioni elettronici N-Channel Enhancement Mode Field Effect Transistor

HFP830 Scheda tecnica (HTML) - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD


HFP830 Dettagli del prodotto

General Description
This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.

Features
• 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF830




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