| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Samsung semiconductor |
K4F170411D
|
225Kb / 20P |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
|
K4F660412D
|
367Kb / 20P |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM44C4000C
|
340Kb / 20P |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM44C4005C
|
378Kb / 20P |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
|
K4F170411C
|
225Kb / 20P |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
 Micron Technology |
MT4C4004
|
1Mb / 13P |
1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE
|
|
MT4C4004J
|
887Kb / 12P |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
 Alliance Semiconductor ... |
AS4CM4EOQ
|
353Kb / 16P |
4M X 4 CMOS Quad CAS DRAM (EDO) family
|
 Austin Semiconductor |
AS4C4M4
|
2Mb / 19P |
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT
|
|
AS4LC4M4
|
2Mb / 19P |
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V
|