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K7P403622M Scheda tecnica (PDF) - Samsung semiconductor

K7P403622M Datasheet PDF - Samsung semiconductor
Il numero della parte K7P403622M
Scarica  K7P403622M Scarica
Grandezza file   240.88 Kbytes
Page   12 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 128Kx36 & 256Kx18 Synchronous Pipelined SRAM

K7P403622M Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
K7P403622M Datasheet PDF - Samsung semiconductor

Il numero della parte K7P403622M
Scarica  K7P403622M Click to download

Grandezza file   240.88 Kbytes
Page   12 Pages
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Spiegazioni elettronici 128Kx36 & 256Kx18 Synchronous Pipelined SRAM

K7P403622M Scheda tecnica (HTML) - Samsung semiconductor


K7P403622M Dettagli del prodotto

FUNCTION DESCRIPTION
The K7P403622M and K7P401822M are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 131,072words of 36 bits(or 262, 144 words of 18 bits)and is implemented in SAMSUNG’s advanced CMOS technology.

FEATURES
• 128Kx36 or 256Kx18 Organizations.
• 3.3V Core Power Supply.
• LVTTL Input and Output Levels.
• Differential, PECL Clock Inputs K, K.
• Synchronous Read and Write Operation
• Registered Input and Registered Output
• Internal Pipeline Latches to Support Late Write.
• Byte Write Capability(four byte write selects, one for each 9bits)
• Synchronous or Asynchronous Output Enable.
• Power Down Mode via ZZ Signal.
• JTAG 1149.1 Compatible Test Access port.
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm)




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