Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Features
• Typical two-carrier WCDMA performance,
   8 dB PAR
   - POUT = 33 dBm Avg
   - ACPR = –40 dBc
• Typical CW performance, 940 MHz, 28 V
   - POUT = 40 dBm
   - Efficiency = 59%
   - Gain = 20 dB
• Typical CW performance, 2140 MHz, 28 V
   - POUT = 40 dBm
   - Efficiency = 50%
   - Gain = 15 dB
• Capable of handling 10:1 VSWR @ 28 V, 8 W
   (CW) output power
• Integrated ESD protection : Human Body Model,
   Class 2 (minimum)
• Excellent thermal stability
• Pb-free and RoHS compliant