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WFD830B Scheda tecnica (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
WFD830B Datasheet PDF - Shenzhen Winsemi Microelectronics Co., Ltd
Il numero della parte WFD830B
Scarica  WFD830B Scarica
Grandezza file   434.55 Kbytes
Page   7 Pages
Produttore elettronici  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Homepage  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd
Spiegazioni elettronici Silicon N-Channel MOSFET

WFD830B Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
WFD830B Datasheet PDF - Shenzhen Winsemi Microelectronics Co., Ltd

Il numero della parte WFD830B
Scarica  WFD830B Click to download

Grandezza file   434.55 Kbytes
Page   7 Pages
Produttore elettronici  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Homepage  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd
Spiegazioni elettronici Silicon N-Channel MOSFET

WFD830B Scheda tecnica (HTML) - Shenzhen Winsemi Microelectronics Co., Ltd


WFD830B Dettagli del prodotto

GeneralDescription

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology lineaelectroniclampballast.



Features

■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V

■ Ultra-lowGatecharge(Typical18nC)

■ FastSwitchingCapability

■ 100%AvalancheTested

■ MaximumJunctionTemperatureRange(150℃)



 




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