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SST29SF020 Scheda tecnica (PDF) - Silicon Storage Technology, Inc

SST29SF020 Datasheet PDF - Silicon Storage Technology, Inc
Il numero della parte SST29SF020
Scarica  SST29SF020 Scarica
Grandezza file   290.32 Kbytes
Page   24 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF020 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SST29SF020 Datasheet PDF - Silicon Storage Technology, Inc

Il numero della parte SST29SF020
Scarica  SST29SF020 Click to download

Grandezza file   290.32 Kbytes
Page   24 Pages
Produttore elettronici  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Spiegazioni elettronici 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF020 Scheda tecnica (HTML) - Silicon Storage Technology, Inc


SST29SF020 Dettagli del prodotto

PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.7- 3.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
    – 5.0V-only for SST29SF512/010/020/040
    – 2.7-3.6V for SST29VF512/010/020/040
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 10 mA (typical)
    – Standby Current:
    30 µA (typical) for SST29SF512/010/020/040
    1 µA (typical) for SST29VF512/010/020/040
• Sector-Erase Capability
    – Uniform 128 Byte sectors
• Fast Read Access Time:
    – 55 ns
    – 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Byte-Program Time: 14 µs (typical)
    – Chip Rewrite Time:
        1 second (typical) for SST29SF/VF512
        2 seconds (typical) for SST29SF/VF010
        4 seconds (typical) for SST29SF/VF020
        8 seconds (typical) for SST29SF/VF040
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• TTL I/O Compatibility for SST29SFxxx
• CMOS I/O Compatibility for SST29VFxxx
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-pin PLCC
    – 32-pin TSOP (8mm x 14mm)
    – 32-pin PDIP




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A proposito di Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) era una società tecnologica americana specializzata nella progettazione e produzione di soluzioni di memoria non volatili, tra cui memoria flash e microcontrollori.
La compagnia è stata fondata nel 1991 e ha avuto il suo quartier generale a Sunnyvale, in California.
SST era noto per la sua tecnologia innovativa e i prodotti di alta qualità e aveva una forte reputazione nel settore della memoria e dello stoccaggio.
Nel 2010, SST è stato acquisito da Microchip Technology Inc., un fornitore leader di microcontrollore e semiconduttori analogici.
Oggi, SST opera come una consociata di microchip e continua a fornire soluzioni di memoria non volatili per una varietà di applicazioni.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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