KF4N80F Scheda tecnica(PDF) - MORNSUN Science& Technology Ltd.

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KF4N80F Scheda tecnica (PDF) - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet PDF - MORNSUN Science& Technology Ltd.


Il numero della parte	KF4N80F

Scarica	KF4N80F Scarica

Grandezza file	391.06 Kbytes

Page	6 Pages

Produttore elettronici	MORNSUN [MORNSUN Science& Technology Ltd.]

Homepage	http://www.mornsun-power.com

Logo

Spiegazioni elettronici

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KF4N80F Datasheet (PDF)

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KF4N80F Datasheet PDF - MORNSUN Science& Technology Ltd.


Il numero della parte	KF4N80F

Scarica	KF4N80F Click to download

Grandezza file	391.06 Kbytes

Page	6 Pages

Produttore elettronici	MORNSUN [MORNSUN Science& Technology Ltd.]

Homepage	http://www.mornsun-power.com

Logo

Spiegazioni elettronici	This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KF4N80F Scheda tecnica (HTML) - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 1Page - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 2Page - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 3Page - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 4Page - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 5Page - MORNSUN Science& Technology Ltd.

KF4N80F Datasheet HTML 6Page - MORNSUN Science& Technology Ltd.

KF4N80F Dettagli del prodotto

General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES
• VDSS=800V, ID=4A
• Drain-Source ON Resistance :
RDS(ON)(Max)=2.6Ω @VGS=10V
• Qg(typ.)= 17nC

Codice articolo simile - KF4N80F

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
KEC(Korea Electronics)	KF4N80F	389Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	KF4N80F	1Mb / 9P	Power MOSFET
KEC(Korea Electronics)	KF4N80F	389Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR

Descrizione simile - KF4N80F

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
KEC(Korea Electronics)	KMA3D6N20SA	705Kb / 5P	This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
	KMD6D0DN40Q	378Kb / 5P	This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
	KF1N60L	882Kb / 7P	This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
	KF2N60L	1Mb / 7P	This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
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	KPS8N60F	390Kb / 6P	This Super Junction MOSFET has better characteristics
	KPS8N65F	993Kb / 6P	This Super Junction MOSFET has better characteristics
	KPS11N60F	390Kb / 6P	This Super Junction MOSFET has better characteristics
	KPS11N65F	390Kb / 6P	This Super Junction MOSFET has better characteristics
	KPS15N60F	390Kb / 6P	This Super Junction MOSFET has better characteristics

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