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IS25LQ080 Scheda tecnica (PDF) - Integrated Silicon Solution, Inc

IS25LQ080 Datasheet PDF - Integrated Silicon Solution, Inc
Il numero della parte IS25LQ080
Scarica  IS25LQ080 Scarica
Grandezza file   1080.1 Kbytes
Page   54 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 8 Mbit Single Operating Voltage Serial Flash Memory With 104

IS25LQ080 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
IS25LQ080 Datasheet PDF - Integrated Silicon Solution, Inc

Il numero della parte IS25LQ080
Scarica  IS25LQ080 Click to download

Grandezza file   1080.1 Kbytes
Page   54 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 8 Mbit Single Operating Voltage Serial Flash Memory With 104

IS25LQ080 Scheda tecnica (HTML) - Integrated Silicon Solution, Inc


IS25LQ080 Dettagli del prodotto

GENERAL DESCRIPTION

The IS25LQ080 is 8 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.



FEATURES

• Single Power Supply Operation

- Low voltage range: 2.3 V - 3.6 V

• Memory Organization

- IS25LQ080: 1024K x 8 (8 Mbit)

• Cost Effective Sector/Block Architecture

- 8Mb : Uniform 4KByte sectors / sixteen uniform 64KByte blocks

• Serial Peripheral Interface (SPI) Compatible

- Supports single-, dual- or quad-output

- Supports SPI Modes 0 and 3

- Maximum 33 MHz clock rate for normal read

- Maximum 104 MHz clock rate for fast read

- Maximum 208MHz clock rate

- Maximum 400MHz clock rate equivalent Quad SPI

• Byte Program Operation

- Typical 10 us/Byte

• Page Program (up to 256 Bytes) Operation

- Maximum 0.7ms per page program

• Sector, Block or Chip Erase Operation

- Sector Erase (4KB)150ms (Typ)

- Block Erase  (64KB)500ms (Typ)

- Chip Erase 2s (8Mb)

• Low Power Consumption

- Max 12 mA active read current

- Max 20 mA program/erase current

- Max 30 uA standby current

• Hardware Write Protection

- Protect and unprotect the device from write operation by Write Protect (WP#) Pin

• Software Write Protection

- The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only

• High Product Endurance

- Guaranteed 100,000 program/erase cycles per single sector

- Minimum 20 years data retention

• Industrial Standard Pin-out and Package

- 8-pin 208mil SOIC

- 8-pin 150mil VVSOP

- 8-contact WSON

- PDIP

- Lead-free (Pb-free) package

•Additional 256-byte Security information one-time programmable (OTP) area

•Special protect function

-  Safe guard function (Appendix 1)

-  Sector unlock function (Appendix 2)




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A proposito di Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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