Description

The  FM25V20  is  a  2-megabit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

Features

2M bit Ferroelectric Nonvolatile RAM        

    Organized as 256K x 8 bits

    High Endurance 100 Trillion (10¹⁴) Read/Writes

    10 Year Data Retention

    NoDelay™ Writes

    Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

   Up to 40 MHz Frequency

   Direct Hardware Replacement for Serial Flash

   SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

   Hardware Protection

   Software Protection

Device ID

   Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

   Low Voltage Operation 2.0V – 3.6V

   100 A Standby Current (typ.)

   3 A Sleep Mode Current (typ.)

Industry Standard Configurations

   Industrial Temperature -40C to +85C

   8-pin “Green”/RoHS EIAJ SOIC Package

   8-pin “Green”/RoHS TDFN Package

   8-pin “Green”/POHS PDIP Package