APT5010JN Scheda tecnica(PDF) - Advanced Power Technology

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APT5010JN Scheda tecnica (PDF) - Advanced Power Technology

APT5010JN Datasheet PDF - Advanced Power Technology


Il numero della parte	APT5010JN

Scarica	APT5010JN Scarica

Grandezza file	60.44 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

Logo

Spiegazioni elettronici

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5010JN Datasheet (PDF)

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Scarica Scheda tecnica

APT5010JN Datasheet PDF - Advanced Power Technology


Il numero della parte	APT5010JN

Scarica	APT5010JN Click to download

Grandezza file	60.44 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

Logo

Spiegazioni elettronici	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5010JN Scheda tecnica (HTML) - Advanced Power Technology

APT5010JN Datasheet HTML 1Page - Advanced Power Technology

APT5010JN Datasheet HTML 2Page - Advanced Power Technology

APT5010JN Datasheet HTML 3Page - Advanced Power Technology

APT5010JN Datasheet HTML 4Page - Advanced Power Technology

APT5010JN Dettagli del prodotto

POWER MOS IV®
SINGLE DIE ISOTOP® PACKAGE

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Codice articolo simile - APT5010JN

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Advanced Power Technolo...	APT5010JFLL	63Kb / 2P	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
	APT5010JFLL	175Kb / 5P	POWER MOS 7 FREDFET
	APT5010JFLL	175Kb / 5P	POWER MOS 7 FREDFET
	APT5010JLC	35Kb / 2P	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
	APT5010JLL	61Kb / 2P	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

Descrizione simile - APT5010JN

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Seme LAB	SML100B13	21Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML100H9	26Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML100S13	20Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML10B75XX	21Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML10J144	23Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML10J225	23Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML10T75XX	19Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	SML120J25	23Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Advanced Power Technolo...	APT6060AN	386Kb / 4P	N-CHANNEL ENHANCEMENT-MODE HIGH VOLTAGE POWER MOSFETS
Seme LAB	BFC18	30Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

A proposito di Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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