| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
TC58NVG1S3ETA00
|
497Kb / 65P |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
 Hynix Semiconductor |
H27U4G8F2D
|
1,015Kb / 62P |
4 Gbit (512M x 8 bit) NAND Flash
|
 Toshiba Semiconductor |
TC58BVG2S0HBAI6
|
2Mb / 53P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2018-06-01C |
|
TC58NVG2S0FBAI4
|
679Kb / 71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NVG2S0FTAI0
|
527Kb / 71P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NYG2S0FBAI4
|
1Mb / 71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TH58BVG3S0HBAI4
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
|
TH58BVG3S0HBAI6
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
|
TH58BVG3S0HTAI0
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |
|
TH58BYG3S0HBAI4
|
2Mb / 54P |
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
2018-06-01C |