Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
NXP Semiconductors |
PSMN3R3-40YS
|
255Kb / 15P |
N-channel LFPAK 40 V 3.3 m廓 standard level MOSFET
Rev. 01-8 March 2010 |
Fairchild Semiconductor |
FCB36N60NTM
|
239Kb / 8P |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
|
FCB36N60N
|
239Kb / 8P |
N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
|
FDS4897AC
|
413Kb / 10P |
Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 40 V, 6.1 A, 26 m廓 P-Channel: -40 V, -5.2 A, 39 m廓
|
FDD6796
|
287Kb / 6P |
N-Channel PowerTrench짰 MOSFET 25 V, 40 A, 5.7 m廓
|
FDMS8848NZ
|
295Kb / 7P |
N-Channel PowerTrench짰 MOSFET 40 V, 49 A, 3.1 m廓
|
FDD8426H
|
469Kb / 11P |
Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 40 V, 12 A, 12 m廓 P-Channel: -40 V, -10 A, 17 m廓
|
ON Semiconductor |
NVMJST3D3N04C
|
195Kb / 7P |
MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A
August, 2022 - Rev. 1 |
NVMYS3D5N04C
|
334Kb / 7P |
MOSFET ??Power, Single N-Channel 40 V, 3.3 m, 102 A
July, 2019 ??Rev. 0 |
NTMYS3D5N04C
|
331Kb / 7P |
MOSFET ??Power, Single, N-Channel 40 V, 3.3 m, 102 A
June, 2019-Rev. 0 |