RF Power Field Effect Transistors

N- Channel Enhancement- Mode Lateral MOSFETs



Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.



• Typical CW Performance: VDD= 50 Volts, IDQ= 900 mA,

  Pout= 300 Watts, f = 220 MHz

    Power Gain ó 25.5 dB

    Drain Efficiency ó 68%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power



Features

• Integrated ESD Protection

• Excellent Thermal Stability

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.