TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM

N–Channel Enhancement–Mode Silicon Gate

TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to with stand high energy in the avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.