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DS1250AB Scheda tecnica (PDF) - Dallas Semiconductor

DS1250AB Datasheet PDF - Dallas Semiconductor
Il numero della parte DS1250AB
Scarica  DS1250AB Scarica
Grandezza file   217.62 Kbytes
Page   11 Pages
Produttore elettronici  DALLAS [Dallas Semiconductor]
Homepage  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor
Spiegazioni elettronici 4096k Nonvolatile SRAM

DS1250AB Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
DS1250AB Datasheet PDF - Dallas Semiconductor

Il numero della parte DS1250AB
Scarica  DS1250AB Click to download

Grandezza file   217.62 Kbytes
Page   11 Pages
Produttore elettronici  DALLAS [Dallas Semiconductor]
Homepage  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor
Spiegazioni elettronici 4096k Nonvolatile SRAM

DS1250AB Scheda tecnica (HTML) - Dallas Semiconductor


DS1250AB Dettagli del prodotto

DESCRIPTION
The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. DS1250 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES
■ 10 years minimum data retention in the
absence of external power
■ Data is automatically protected during power loss
■ Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times of 70ns
■ Lithium energy source is electrically
   disconnected to retain freshness until power is
   applied for the first time
■ Full ±10% VCC operating range (DS1250Y)
■ Optional ±5% VCC operating range (DS1250AB)
■ Optional industrial temperature range of
   -40°C to +85°C, designated IND
■ JEDEC standard 32-pin DIP package
■ PowerCap Module (PCM) package
   - Directly surface-mountable module
   - Replaceable snap-on PowerCap provides lithium backup battery
   - Standardized pinout for all nonvolatile SRAM products
   - Detachment feature on PCM allows easy removal using a regular screwdriver




Codice articolo simile - DS1250AB

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Descrizione simile - DS1250AB

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Dallas Semiconductor
DS1250W DALLAS-DS1250W Datasheet
217Kb / 11P
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DS1350Y DALLAS-DS1350Y Datasheet
228Kb / 12P
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DS1250BL DALLAS-DS1250BL Datasheet
181Kb / 9P
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logo
Maxim Integrated Produc...
DS1250Y-70IND MAXIM-DS1250Y-70IND Datasheet
242Kb / 10P
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Rev 12/10
DS1350YL MAXIM-DS1350YL Datasheet
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022598
DS1350W MAXIM-DS1350W Datasheet
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DS1350AB MAXIM-DS1350AB Datasheet
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DS1250YL MAXIM-DS1250YL Datasheet
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DS1250W MAXIM-DS1250W Datasheet
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DS1250AB MAXIM-DS1250AB Datasheet
242Kb / 10P
4096k Nonvolatile SRAM
19-5647; Rev 12/10
More results




A proposito di Dallas Semiconductor


Dallas Semiconductor era una società americana fondata nel 1984 ed era un fornitore di semiconduttori a segnale misto e digitale.
La società aveva sede a Dallas, in Texas, ed era nota per i suoi prodotti e tecnologie innovative nel campo di orologi in tempo reale, sensori di temperatura e altri circuiti integrati.
Nel 2002, Dallas Semiconductor è stato acquisito da Maxim Integrated, una società a semiconduttore multinazionale, ed è diventato una filiale di Maxim.
Il marchio di semiconduttori Dallas non è più in uso, ma i suoi prodotti e la sua tecnologia continuano a far parte del portafoglio di Maxim.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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