NX5330SA Scheda tecnica(PDF) - California Eastern Labs

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NX5330SA Scheda tecnica (PDF) - California Eastern Labs

NX5330SA Datasheet PDF - California Eastern Labs


Il numero della parte	NX5330SA

Scarica	NX5330SA Scarica

Grandezza file	184.13 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

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Spiegazioni elettronici

1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

NX5330SA Datasheet (PDF)

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Scarica Scheda tecnica

NX5330SA Datasheet PDF - California Eastern Labs


Il numero della parte	NX5330SA

Scarica	NX5330SA Click to download

Grandezza file	184.13 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici	1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

NX5330SA Scheda tecnica (HTML) - California Eastern Labs

NX5330SA Datasheet HTML 1Page - California Eastern Labs

NX5330SA Datasheet HTML 2Page - California Eastern Labs

NX5330SA Datasheet HTML 3Page - California Eastern Labs

NX5330SA Datasheet HTML 4Page - California Eastern Labs

NX5330SA Datasheet HTML 5Page - California Eastern Labs

Codice articolo simile - NX5330SA

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NX5302	127Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
	NX5302EH	127Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
	NX5302EH	128Kb / 4P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
	NX5302EJ	127Kb / 4P	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
	NX5302EJ	128Kb / 4P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

Descrizione simile - NX5330SA

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NX7337BF-AA	860Kb / 5P	1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7338BF-AA	877Kb / 5P	1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7339BB-AA	882Kb / 5P	1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
Renesas Technology Corp	NX7337BF-AA	173Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
California Eastern Labs	NX7337BJ-AA	209Kb / 7P	1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
Renesas Technology Corp	NX7337BF-AA	165Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7338BF-AA	164Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7339BB-AA	173Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
	NX7338BF-AA	738Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION Jul 12, 2012
	NX7339BB-AA	747Kb / 9P	LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION Jul 12, 2012

A proposito di California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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