RC2012F510CS Scheda tecnica(PDF) - Samsung semiconductor

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RC2012F510CS Scheda tecnica (PDF) - Samsung semiconductor

RC2012F510CS Datasheet PDF - Samsung semiconductor


Il numero della parte	RC2012F510CS

Scarica	RC2012F510CS Scarica

Grandezza file	791.37 Kbytes

Page	2 Pages

Produttore elettronici	SAMSUNG [Samsung semiconductor]

Homepage	http://www.samsung.com/Products/Semiconductor

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Spiegazioni elettronici

Owing to the reduced lead inductance, the high frequency characteristic is excellent.

RC2012F510CS Datasheet (PDF)

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Scarica Scheda tecnica

RC2012F510CS Datasheet PDF - Samsung semiconductor


Il numero della parte	RC2012F510CS

Scarica	RC2012F510CS Click to download

Grandezza file	791.37 Kbytes

Page	2 Pages

Produttore elettronici	SAMSUNG [Samsung semiconductor]

Homepage	http://www.samsung.com/Products/Semiconductor

Logo

Spiegazioni elettronici	Owing to the reduced lead inductance, the high frequency characteristic is excellent.

RC2012F510CS Scheda tecnica (HTML) - Samsung semiconductor

RC2012F510CS Datasheet HTML 1Page - Samsung semiconductor

RC2012F510CS Datasheet HTML 2Page - Samsung semiconductor

Codice articolo simile - RC2012F510CS

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	RC2012F100BS	167Kb / 12P	THICK FILM CHIP RESISTORS
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Descrizione simile - RC2012F510CS

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
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	IN08144	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
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