Description
M/A-COM Tech’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
• Balanced Design
• Excellent Input/Output Match
• Self-biased Architecture
• 23.0 dB Small Signal Gain
• 2.6 dB Noise Figure
• 100% On-Wafer RF, DC and Noise Figure Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010
• RoHS* Compliant and 260°C Reflow Compatible