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IRF223 Scheda tecnica (PDF) - New Jersey Semi-Conductor Products, Inc.

IRF223 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
Il numero della parte IRF223
Scarica  IRF223 Scarica

Grandezza file   135.19 Kbytes
Page   3 Pages
Produttore elettronici  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Homepage  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Spiegazioni elettronici Nanosecond Switching Speeds

IRF223 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
IRF223 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

Il numero della parte IRF223
Scarica  IRF223 Click to download

Grandezza file   135.19 Kbytes
Page   3 Pages
Produttore elettronici  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Homepage  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.
Spiegazioni elettronici Nanosecond Switching Speeds

IRF223 Scheda tecnica (HTML) - New Jersey Semi-Conductor Products, Inc.

IRF223 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc. IRF223 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc. IRF223 Datasheet HTML 3Page - New Jersey Semi-Conductor Products, Inc.

IRF223 Dettagli del prodotto

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.0A and 5.0A, 150V and 200V
• rDS(ON) = 0.8Ω and 1.2£i
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device




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