DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance
stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

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