DESCRIPTION
The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued

FEATURES
• 0.23 µm Process Technology
• Single 3.0 V read, program and erase
    Minimized system level power requirements
• High Performance Page Mode
    25 ns maximum page access time (70 ns random access time)
• 8 words Page ( × 16) /4 double words ( × 32) size
• Compatible with JEDEC-standard commands
    Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
    90-pin SSOP (Package suffix : PFV)
    84-ball FBGA (Package suffix : PBT)
• Minimum 100,000 program/erase cycles
• Sector erase architecture
    One 16 K word, two 8 K words, one 96 K word, and fifteen 128 K words sectors in word mode ( × 16)
    One 8 K double word, two 4 K double words, one 48 K double word, and fifteen 64 K double words sectors in double word mode ( × 32)
    Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
    T = Top sector
    B = Bottom sector
• Embedded EraseTM Algorithms
    Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
    Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
    When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector protection
    Hardware method disables any combination of sectors from program or erase operations
• Fast Programming Function by Extended command
• Temporary sector unprotection
    Temporary sector unprotection with the software command
• In accordance with CFI (Common Flash Memory Interface)