Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

Features

•  Build in Biasing Circuit; To reduce using parts cost & PC board space.

•  Superior cross modulation characteristics.

•  High gain;

   (PG = 28 dB typ. at f = 200 MHz)

•  Wide supply voltage range; Applicable with 5V to 9V supply voltage.

•  Withstanding to ESD;

    Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•  Provide mini mold packages; MPAK-4R(SOT-143 var.)