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TP0610T-G Scheda tecnica (PDF) - Supertex, Inc

TP0610T-G Datasheet PDF - Supertex, Inc
Il numero della parte TP0610T-G
Scarica  TP0610T-G Scarica

Grandezza file   656.7 Kbytes
Page   5 Pages
Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc
Spiegazioni elettronici P-Channel Enhancement Mode Vertical DMOS FETs

TP0610T-G Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
TP0610T-G Datasheet PDF - Supertex, Inc

Il numero della parte TP0610T-G
Scarica  TP0610T-G Click to download

Grandezza file   656.7 Kbytes
Page   5 Pages
Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc
Spiegazioni elettronici P-Channel Enhancement Mode Vertical DMOS FETs

TP0610T-G Scheda tecnica (HTML) - Supertex, Inc

TP0610T-G Datasheet HTML 1Page - Supertex, Inc TP0610T-G Datasheet HTML 2Page - Supertex, Inc TP0610T-G Datasheet HTML 3Page - Supertex, Inc TP0610T-G Datasheet HTML 4Page - Supertex, Inc TP0610T-G Datasheet HTML 5Page - Supertex, Inc

TP0610T-G Dettagli del prodotto

General Description
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Features
► High input impedance and high gain
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► Free from secondary breakdown

Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic systems
► Analog switches
► Power management
► Telecom switches




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