28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

■  Flash Electrical Chip-Erase
 - 1 Second Typical Chip-Erase
■  Quick-Pulse Programming Algorithm
 - 10 µs Typical Byte-Program
 - 2 Second Chip-Program
 ■ 100,000 Erase/Program Cycles
 ■ 12.0 V ±5% VPP
 ■ High-Performance Read
 - 90 ns Maximum Access Time
 ■ CMOS Low Power Consumption
 - 10 mA Typical Active Current
 - 50 µA Typical Standby Current
 - 0 Watts Data Retention Power
 ■ Integrated Program/Erase Stop Timer
 ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
 ■ Noise Immunity Features
 - ±10% VCC Tolerance
 - Maximum Latch-Up Immunity through EPI Processing
■  ETOX™ Nonvolatile Flash Technology
-  EPROM-Compatible Process Base
 - High-Volume Manufacturing Experience
 ■ JEDEC-Standard Pinouts
-  32-Pin Plastic Dip
-  32-Lead PLCC
 - 32-Lead TSOP
     (See Packaging Spec., Order #231369)
■  Extended Temperature Options