2SC4094 Scheda tecnica(PDF) - California Eastern Labs

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2SC4094 Scheda tecnica (PDF) - California Eastern Labs

2SC4094 Datasheet PDF - California Eastern Labs


Il numero della parte	2SC4094

Scarica	2SC4094 Scarica

Grandezza file	1079.11 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici

MICROWAVE LOW NOISE AMPLIFIER

2SC4094 Datasheet (PDF)

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Scarica Scheda tecnica

2SC4094 Datasheet PDF - California Eastern Labs


Il numero della parte	2SC4094

Scarica	2SC4094 Click to download

Grandezza file	1079.11 Kbytes

Page	5 Pages

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

Spiegazioni elettronici	MICROWAVE LOW NOISE AMPLIFIER

2SC4094 Scheda tecnica (HTML) - California Eastern Labs

2SC4094 Datasheet HTML 1Page - California Eastern Labs

2SC4094 Datasheet HTML 2Page - California Eastern Labs

2SC4094 Datasheet HTML 3Page - California Eastern Labs

2SC4094 Datasheet HTML 4Page - California Eastern Labs

2SC4094 Datasheet HTML 5Page - California Eastern Labs

2SC4094 Dettagli del prodotto

DESCRIPTION
The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.

FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA

Codice articolo simile - 2SC4094

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	2SC4094	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Renesas Technology Corp	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

Descrizione simile - 2SC4094

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Maxim Integrated Produc...	MAX2611	55Kb / 6P	DC-to-Microwave, Low-Noise Amplifier 19-1094; Rev 0; 6/96
Maxim Integrated Produc...	MAX2650	53Kb / 6P	DC-to-Microwave, 5V Low-Noise Amplifier 19-1135; Rev 1; 8/03
Renesas Technology Corp	2SC3583	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	UPA806T	209Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Labs	2SC3583	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
	2SC3585	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
	2SC4095	1Mb / 6P	MICROWAVE LOW NOISE AMPLIFIER
Renesas Technology Corp	2SC3585	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

A proposito di California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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