| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Fairchild Semiconductor |
FDD3860
|
335Kb / 6P |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
 Analog Power |
AM1541CE
|
104Kb / 3P |
High performance trench technology
|
 List of Unclassifed Man... |
MT2301
|
522Kb / 7P |
High performance trench technology for extremely low RDS(ON)
|
 Shenzhen Luguang Electr... |
LG50N10
|
947Kb / 5P |
High density cell design for ultra low Rdson
|
 Shenzhen Huazhimei Semi... |
HM25N03Q
|
553Kb / 6P |
High density cell design for ultra low Rdson
|
|
HM20N15K
|
524Kb / 6P |
High density cell design for ultra low Rdson
|
|
HM60N02K
|
498Kb / 6P |
High density cell design for ultra low Rdson
|
|
HM35N03Q
|
391Kb / 6P |
High density cell design for ultra low Rdson
|
|
HM100N03D
|
435Kb / 6P |
High density cell design for ultra low Rdson
|
|
HM100N02
|
778Kb / 6P |
High density cell design for ultra low Rdson
|