Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
KEC(Korea Electronics) |
KDV350
|
67Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
Renesas Technology Corp |
HVB350BYP
|
147Kb / 5P |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
|
KEC(Korea Electronics) |
KDV240E
|
383Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
KDV240
|
386Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
KDS2236M
|
199Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
KDV1470
|
36Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
KDV239
|
72Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
KDV239E
|
70Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
KDV1471
|
71Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
KDV1430
|
207Kb / 2P |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|