The ISL6594D is high frequency MOSFET driver specifically
designed to drive upper and lower power N-Channel
MOSFETs in a synchronous rectified buck converter
topology. This driver combined with the ISL6594D Digital
Multi-Phase Buck PWM controller and N-Channel MOSFETs
forms a complete core-voltage regulator solution for
advanced microprocessors.
The ISL6594D drives both upper and lower gates over a range
of 4.5V to 13.2V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs between
gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. The ISL6594D includes an overvoltage protection
feature operational before VCC exceeds its turn-on
threshold, at which the PHASE node is connected to the
gate of the low side MOSFET (LGATE). The output voltage
of the converter is then limited by the threshold of the low
side MOSFET, which provides some protection to the
microprocessor if the upper MOSFET(s) is shorted.
The ISL6594D also features an input that recognizes a
high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the
controlled output voltage when operation is suspended. This
feature eliminates the need for the Schottky diode that may
be utilized in a power system to protect the load from
negative output voltage damage.

Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Pin-to-pin Compatible with ISL6596
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Optimized for 3.3V PWM Input
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)

Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD