GENERAL DESCRIPTION
The MX29F200T/B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200T/B is packaged in 44-pin SOP and 48- pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES
• 5.0V±10% for read, erase and write operation
• 131072x16/262144x8 switchable
• Fast access time: 55/70/90/120ns
• Low power consumption
    - 40mA maximum active current@5MHz
    - 1uA typical standby current
• Command register architecture
    - Byte/Word Programming (7us/12us typical)
    - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and
    64K-Byte x3)
• Auto Erase (chip) and Auto Program
    - Automatically erase any combination of sectors or
    the whole chip with Erase Suspend capability.
    - Automatically program and verify data at specified
    address
• Status Reply
    - Data polling & Toggle bit for detection of program
    and erase cycle completion.
• Ready/Busy pin(RY/BY)
    - Provides a hardware method or detecting program
    or erase cycle completion
• Compatibility with JEDEC standard
    - Pinout and software compatible with single-power
    supply Flash
    - Superior inadvertent write protection
• Sector protection
    - Hardware method to disable any combination of
    sectors from program or erase operations
    - Sector protect/unprotect for 5V only system or 5V/
    12V system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
    - T = Top Boot Sector
    - B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
    - 44-pin SOP
    - 48-pin TSOP
• Erase suspend/ Erase Resume
    - Suspends an erase operation to read data from, or
    program data to a sector that is not being erased, then
    resume the erase operation.
• Hardware RESET pin
    - Resets internal state mechine to the read mode
• 20 years data retention