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CGH60120D Scheda tecnica (PDF) - Cree, Inc
CGH60120D Datasheet PDF - Cree, Inc
Il numero della parte CGH60120D
Scarica  CGH60120D Scarica
Grandezza file   592.12 Kbytes
Page   7 Pages
Produttore elettronici  CREE [Cree, Inc]
Homepage  http://www.cree.com/
Logo CREE - Cree, Inc
Spiegazioni elettronici 120 W, 6.0 GHz, GaN HEMT Die

CGH60120D Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
CGH60120D Datasheet PDF - Cree, Inc

Il numero della parte CGH60120D
Scarica  CGH60120D Click to download

Grandezza file   592.12 Kbytes
Page   7 Pages
Produttore elettronici  CREE [Cree, Inc]
Homepage  http://www.cree.com/
Logo CREE - Cree, Inc
Spiegazioni elettronici 120 W, 6.0 GHz, GaN HEMT Die

CGH60120D Scheda tecnica (HTML) - Cree, Inc


CGH60120D Dettagli del prodotto

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Effciency

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms




Codice articolo simile - CGH60120D

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
WOLFSPEED, INC.		 CGH60120D WOLFSPEED-CGH60120D Datasheet
1Mb / 8P		 120 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-2
More results


Descrizione simile - CGH60120D

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Cree, Inc		 CGH60008D CREE-CGH60008D Datasheet
528Kb / 8P		 8 W, 6.0 GHz, GaN HEMT Die
Rev 0.3
CGH60030D CREE-CGH60030D Datasheet
622Kb / 8P		 30 W, 6.0 GHz, GaN HEMT Die
Rev 3.1
CGH60060D CREE-CGH60060D Datasheet
618Kb / 7P		 60 W, 6.0 GHz, GaN HEMT Die
Rev 3.1
CGHV60040D CREE-CGHV60040D Datasheet
654Kb / 7P		 40 W, 6.0 GHz, GaN HEMT Die
logo
WOLFSPEED, INC.		 CGH60008D WOLFSPEED-CGH60008D Datasheet
977Kb / 9P		 8 W, 6.0 GHz, GaN HEMT Die
Rev. 1.2, 2022-11-23
CGH60015D WOLFSPEED-CGH60015D Datasheet
980Kb / 9P		 15 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-1
CGH60030D WOLFSPEED-CGH60030D Datasheet
1Mb / 9P		 30 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-1
CGH60060D WOLFSPEED-CGH60060D Datasheet
1Mb / 8P		 60 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-2
CGH60120D WOLFSPEED-CGH60120D Datasheet
1Mb / 8P		 120 W, 6.0 GHz, GaN HEMT Die
Rev. 4.2, 2022-12-2
CGHV60040D WOLFSPEED-CGHV60040D Datasheet
1Mb / 8P		 40 W, 6.0 GHz, GaN HEMT Die
Rev. 1.3, 2022-12-12
More results




A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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