CGHV22200 Scheda tecnica(PDF) - Cree, Inc

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CGHV22200 Scheda tecnica (PDF) - Cree, Inc

CGHV22200 Datasheet PDF - Cree, Inc


Il numero della parte	CGHV22200

Scarica	CGHV22200 Scarica

Grandezza file	1096.61 Kbytes

Page	13 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

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Spiegazioni elettronici

200 W, 1800-2200 MHz, GaN HEMT for LTE

CGHV22200 Datasheet (PDF)

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Scarica Scheda tecnica

CGHV22200 Datasheet PDF - Cree, Inc


Il numero della parte	CGHV22200

Scarica	CGHV22200 Click to download

Grandezza file	1096.61 Kbytes

Page	13 Pages

Produttore elettronici	CREE [Cree, Inc]

Homepage	http://www.cree.com/

Logo

Spiegazioni elettronici	200 W, 1800-2200 MHz, GaN HEMT for LTE

CGHV22200 Scheda tecnica (HTML) - Cree, Inc

CGHV22200 Datasheet HTML 1Page - Cree, Inc

CGHV22200 Datasheet HTML 2Page - Cree, Inc

CGHV22200 Datasheet HTML 3Page - Cree, Inc

CGHV22200 Datasheet HTML 4Page - Cree, Inc

CGHV22200 Datasheet HTML 5Page - Cree, Inc

CGHV22200 Datasheet HTML 6Page - Cree, Inc

CGHV22200 Datasheet HTML 7Page - Cree, Inc

CGHV22200 Datasheet HTML 8Page - Cree, Inc

CGHV22200 Datasheet HTML 9Page - Cree, Inc

CGHV22200 Datasheet HTML 10Page - Cree, Inc

Codice articolo simile - CGHV22200

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	CGHV22100	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0
	CGHV22100-TB	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0
	CGHV22100F	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0
	CGHV22100F-AMP	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0
	CGHV22100P	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0

Descrizione simile - CGHV22200

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	CGHV27200	696Kb / 11P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 0.1
	CGH21120F	1Mb / 13P	120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Rev 3.1
	CGH21240F	1Mb / 15P	240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Rev 3.0
	CGH25120F	1Mb / 12P	120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Rev 3.1
	CGHV22100	1,006Kb / 11P	100 W, 1800-2200 MHz, GaN HEMT for LTE Rev 2.0
	CGHV27100	1Mb / 11P	100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Rev 1.0
	CGHV27200	1Mb / 12P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 1.0
	CGHV40200PP	713Kb / 13P	200 W, 50 V, GaN HEMT
WOLFSPEED, INC.	CGHV14500	3Mb / 20P	500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Rev. 5.0, 2022-7-27
WOLFSPEED, INC.	CGHV40200PP	1Mb / 12P	200 W, 50 V, GaN HEMT Rev. 1.5, 2022-12-8

A proposito di Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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