Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Toshiba Semiconductor |
SSM6G18NU
|
254Kb / 8P |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
TPCP8BA1
|
215Kb / 4P |
Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode
|
SSM5G02TU
|
226Kb / 10P |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5G11TU
|
208Kb / 8P |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5G09TU
|
313Kb / 10P |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H06FE
|
230Kb / 8P |
Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
SSM5H14F
|
319Kb / 7P |
Silicon N Channel MOS Type (U-MOS??/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H08TU
|
314Kb / 10P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H01TU
|
213Kb / 10P |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
SSM5H16TU
|
200Kb / 7P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|