Description
The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

APPLICATIONS
• Low On-Resistance
• Fast Switching Speed
• Low-voltage drive
• Easily designed drive circuits
• Pb-Free Package is available. The suffix G means Pb-free package
• ESD Protected： 2000V