DESCRIPTION
• 12A, 100V
• rDS(ON) = 0.200Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature

APPLICATIONS
• This is an N-Channel enhancement mode silicon gate power
   field effect transistor designed for applications such as
   switching regulators, switching converters, motor drivers,
   relay drivers and drivers for high power bipolar switching
   transistors requiring high speed and low gate drive power.
   This type can be operated directly from integrated circuits.