DESCRIPTION
The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.

FEATURES
• Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
• Internal switch reduces the number of external components
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio.

APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.