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IS43TR16256A-15HBL Scheda tecnica (PDF) - Integrated Silicon Solution, Inc

IS43TR16256A-15HBL Datasheet PDF - Integrated Silicon Solution, Inc
Il numero della parte IS43TR16256A-15HBL
Scarica  IS43TR16256A-15HBL Scarica
Grandezza file   3941.66 Kbytes
Page   88 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 512Mx8, 256Mx16 4Gb DDR3 SDRAM

IS43TR16256A-15HBL Datasheet (PDF)

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IS43TR16256A-15HBL Datasheet PDF - Integrated Silicon Solution, Inc

Il numero della parte IS43TR16256A-15HBL
Scarica  IS43TR16256A-15HBL Click to download

Grandezza file   3941.66 Kbytes
Page   88 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 512Mx8, 256Mx16 4Gb DDR3 SDRAM

IS43TR16256A-15HBL Scheda tecnica (HTML) - Integrated Silicon Solution, Inc


IS43TR16256A-15HBL Dettagli del prodotto

FEATURES
● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
   - Backward compatible to 1.5V
● High speed data transfer rates with system frequency up to 1066 MHz
● 8 internal banks for concurrent operation
● 8n-Bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
   7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
   3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
● Write Leveling
● Up to 200 MHz in DLL off mode
● Operating temperature:
   Commercial (TC = 0°C to +95°C)
   Industrial (TC = -40°C to +95°C)
   Automotive, A1 (TC = -40°C to +95°C)
   Automotive, A2 (TC = -40°C to +105°C)




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A proposito di Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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