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GT30J121 Scheda tecnica (PDF) - Toshiba Semiconductor
GT30J121 Datasheet PDF - Toshiba Semiconductor
Il numero della parte GT30J121
Scarica  GT30J121 Scarica
Grandezza file   294.93 Kbytes
Page   6 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
GT30J121 Datasheet PDF - Toshiba Semiconductor

Il numero della parte GT30J121
Scarica  GT30J121 Click to download

Grandezza file   294.93 Kbytes
Page   6 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121 Scheda tecnica (HTML) - Toshiba Semiconductor


GT30J121 Dettagli del prodotto

High Power Switching Applications
Fast Switching Applications

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
    High speed: tf = 0.05 μs (typ.)
    Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)




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