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STPSC10H065GY-TR Scheda tecnica (PDF) - STMicroelectronics
STPSC10H065GY-TR Datasheet PDF - STMicroelectronics
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive 650 V power Schottky silicon carbide diode

STPSC10H065GY-TR Datasheet (PDF)

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STPSC10H065GY-TR Datasheet PDF - STMicroelectronics

Il numero della parte STPSC10H065GY-TR
Scarica  STPSC10H065GY-TR Click to download

Grandezza file   560.13 Kbytes
Page   11 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive 650 V power Schottky silicon carbide diode

STPSC10H065GY-TR Scheda tecnica (HTML) - STMicroelectronics


STPSC10H065GY-TR Dettagli del prodotto

Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.




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A proposito di STMicroelectronics

STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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