Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 AM15572v1 , TAB

Features
■ Extremely low gate charge
■ Lower RDS(on) x area vs previous generation
■ Low gate input resistance
■ 100% avalanche tested
■ Zener-protected

Applications
■ Switching applications