Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the H series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of high switching
frequency converters. Moreover, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.

Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode

Applications
• Motor control
• UPS, PFC