STGWT60H60DLFB Scheda tecnica(PDF) - STMicroelectronics

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STGWT60H60DLFB Scheda tecnica (PDF) - STMicroelectronics

STGWT60H60DLFB Datasheet PDF - STMicroelectronics


Il numero della parte	STGWT60H60DLFB

Scarica	STGWT60H60DLFB Scarica

Grandezza file	1499.47 Kbytes

Page	17 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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Spiegazioni elettronici

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STGWT60H60DLFB Datasheet (PDF)

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STGWT60H60DLFB Datasheet PDF - STMicroelectronics


Il numero della parte	STGWT60H60DLFB

Scarica	STGWT60H60DLFB Click to download

Grandezza file	1499.47 Kbytes

Page	17 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

Spiegazioni elettronici	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STGWT60H60DLFB Scheda tecnica (HTML) - STMicroelectronics

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STGWT60H60DLFB Datasheet HTML 9Page - STMicroelectronics

STGWT60H60DLFB Datasheet HTML 10Page - STMicroelectronics

STGWT60H60DLFB Dettagli del prodotto

Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low VF soft recovery co-packaged diode
• Lead free package

Applications
• Induction heating
• Microwave oven
• Resonant converters

Codice articolo simile - STGWT60H60DLFB

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STGWT60H65DFB	1Mb / 19P	Low thermal resistance 17-Apr-2015
	STGWT60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019
	STGWT60H65F	1Mb / 14P	60 A, 650 V field stop trench gate IGBT 09-Jan-2013
	STGWT60H65FB	1Mb / 16P	Low thermal resistance 01-Apr-2015

Descrizione simile - STGWT60H60DLFB

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STGW60V60DF	1Mb / 16P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 21-Oct-2013
	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGFW20H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 20 A high speed 28-Aug-2014
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 04-Nov-2016
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 18-Mar-2014
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 28-Sep-2016
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

A proposito di STMicroelectronics

STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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