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LM3641 Scheda tecnica (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641 Datasheet PDF - National Semiconductor (TI)
Il numero della parte LM3641
Scarica  LM3641 Scarica
Grandezza file   304.04 Kbytes
Page   16 Pages
Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)
Spiegazioni elettronici Lithium-Ion Battery Pack Protection Circuit

LM3641 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
LM3641 Datasheet PDF - National Semiconductor (TI)

Il numero della parte LM3641
Scarica  LM3641 Click to download

Grandezza file   304.04 Kbytes
Page   16 Pages
Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)
Spiegazioni elettronici Lithium-Ion Battery Pack Protection Circuit

LM3641 Scheda tecnica (HTML) - National Semiconductor (TI)


LM3641 Dettagli del prodotto

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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A proposito di National Semiconductor (TI)


National Semiconductor era una società di semiconduttori americani fondata nel 1959.
La società era nota per le sue innovazioni nel campo dei circuiti integrati analogici e di segnale misto ed era un fornitore leader di prodotti di gestione dell'alimentazione e di conversione dei dati.
I prodotti National Semiconductor sono stati utilizzati in una varietà di applicazioni tra cui elettronica di consumo, industriali, automobilistici e telecomunicazioni.
La società è stata acquisita da Texas Instruments nel 2011 e i suoi prodotti e tecnologie continuano a essere sviluppati e venduti con il marchio Texas Instruments.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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