VDSS = 500 V
ID25 = 55 A
RDS(on)= 90 mΩ
trr ≤ 250 ns

Features
● Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
● RF capable Mosfets
● Low gate charge and capacitances
   - easier to drive
   -faster switching
● Low drain to tab capacitance(<30pF)
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Rated for Unclamped Inductive Load Switching (UIS)
● Fast intrinsic Rectifier

Applications
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control

Advantages
● Easy assembly
● Space savings
● High power density