Product Description
Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Product Features
• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +42 dBm typ. at 2450 MHz
• Surface-Mountable Power Plastic Package

Applications
• PCS Systems
• WLL, Wideband CDMA Systems
• ISM Systems