| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 NXP Semiconductors |
C1206C104K5RACT
|
542Kb / 16P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 6, 1/2006 |
 Kemet Corporation |
C1206C104K5RACTM
|
71Kb / 1P |
Ceramic, Commercial-(CxxxxC), 0.1 uF, 10%, 50 V, 1206, X7R, SMD, MLCC, Temperature Stable, Class II
|
 NXP Semiconductors |
C1206C104K5RACTR
|
457Kb / 13P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
Rev. 0, 7/2014 |
 Kemet Corporation |
C1206C104K5RACTU
|
71Kb / 1P |
Ceramic, Commercial-(CxxxxC), 0.1 uF, 10%, 50 V, 1206, X7R, SMD, MLCC, Temperature Stable, Class II
|