| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
STMicroelectronics |
SCTH35N65G2V-7
|
378Kb / 15P |
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
17-Dec-2020 |
|
SCTH100N65G2-7AG
|
623Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
27-Nov-2018 |
|
SCTH35N65G2V-7AG
|
620Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020 |
|
SCTWA35N65G2VAG
|
243Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020 |
|
SCT018H65G3AG
|
390Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022 |
|
SCT040H120G3AG
|
386Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022 |
|
SCT040H65G3AG
|
389Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022 |
|
SCT070H120G3AG
|
396Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023 |
|
SCTH100N120G2-AG
|
439Kb / 14P |
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
23-Jul-2020 |
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